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Resistive coupled VO2 oscillators for image recognition article on IEEE TV


Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computation. We have fabricated and simulated small networks of coupled VO2 oscillators and investigated the electrical behavior. It is demonstrated experimentally and through simulations that the coupled oscillators lock in frequency and the phase relation can be adjusted by the coupling resistance. Pattern recognition was simulated in resistor-coupled networks with up to nine oscillators (pixels), demonstrating the possibility of implementation of this task with compact VO2 circuits.

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The article was presented in November 2018 at 2018 IEEE International Conference on Rebooting Computing (ICRC)

The article "Band alignment calculation of dielectric films on VO2" was published in Microelectronic Engineering


The chemical bonding and band edge line-up of several gate insulators on monoclinic (M1) phase VO2arestudied based on hybrid density functional calculations. High dielectric constant HfO2and ZrO2, wide band gapoxide Al2O3, and narrower band gap oxide TiO2are considered. The insulating interface supercells with a cleanbandgap are built and adapted to analysis the band alignment. All the gate insulators show the type-I bandalignment with VO2. The valence band offsets are all larger than 1 eV. The calculated conduction band offsets forHfO2, ZrO2and Al2O3are all larger than 2 eV. In terms of the band alignment, these three insulators can work assuitable gate dielectrics for VO2-based device application, but more accurate line-up analysis on TiO2/VO2in-terface is still needed.

More infos on the article homepage -Aug 2019

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 737109 (PHASE-CHANGE SWITCH).