EPFL has presented in ESSDERC 2017, 47th European Solid-State Device Research Conference a paper entitled: Shunt Capacitive Switches Based on VO2 Metal Insulator Transition for RF Phase Shifter Applications.

The use of Vanadium Oxide for distributed-line phase shifter, showed for the first time in this article, enables an easier process; a compact design and a faster switching time (few ns) if compared to MEMS or even to solid state solutions (GaAs and Si FET).