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New article in IEEE Electron Device Letters

The article "Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators" was published in IEEE Electron Device Letters

Phase Change Workshop on Functional Oxides for Advanced Electronic Functions

The Phase Change workshop will be held on 14.01.2020 in Victoria Eurotel Villars, Villars-sur-Ollon, Switzerland,

The program of the event can be found here:



A. Ionescu & N. Barrett


Project overview: 3eFERRO

N. Barrett


Project overview: Phase-Change Switch

A. Ionescu


Keynote #1: Polarization switching kinetics in ferroelectric HfO2

A. Toriumi


Keynote #2: Using Ferroelectrics for Architectural Support of Machine Learning Models and Homomorphic Encryption Algorithms

M. Niemier


Coffee break


Keynote #3: Ferroelectric rhombohedral phase in zirconia-hafnia thin films

P. Nukala


3eFERRO Invited #1: Some emerging memory technologies and applications

P. Boivin


3eFERRO Invited #2: Impact of non-polar regions on the performance of ferroelectric HfO2 based devices

U. Schroeder


3eFERRO Invited #3: Granularity exploration for logic in memory

I. O’Connor




Keynote 4: VO2 electronic structure and alloys

J. Robertson


Phase-Change Switch Invited #1: Coupled VO2 oscillators for neuromorphic applications: challenges and opportunities

S. Karg


Phase-Change Switch Invited #2: RF functions with VO2 on GaN substrates: towards reconfigurable high frequency electronics

O. Bezencenet


Phase-Change Switch Invited #3: Ge-doped VO2 material processing and DC/RF characterization

I. Stolichnov


Panel Discussion and Q & A with all Keynotes: Role and Horizon of Functional Oxides in Future Electronics

N. Barrett,

A. Ionescu


Closure, farewell

A. Ionescu

Keynotes talks: 30 min + 5 min of questions and discussion // Invited talks: 17 min + 3 min of questions and discussion

New publication in Nature Scientific Reports

A new publication on VO2 Peano reconfigurable inductors for RF frequencies was published in December 2019 in Scientific Reports . We report here fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

New publication: Scaled resistively-coupled VO2 oscillators for Neuromorphic Computing

In Solid-State Electronics Journal a new article on VO2 was published in a joint work of the consortium, here between:IBM Zurich-EPFL Lausanne-Cambridge University-Nov. 2019

The article "Density Functional Theory Studies of the Metal–Insulator Transition in Vanadium Dioxide Alloys" was published in Phys. Status Solidi B

Abstract: Vanadium dioxide (VO2) is of great interest because it has a metal–insulator transition involving a change in structure and electronic structure. For certain applications, it is useful to vary the bandgap and the transition temperature. Although strain can be used, another method is to alloy VO2 with oxides such as GeO2 or MgO. Herein, density functional supercell calculations are carried out on these alloys. The bandgap of the alloys does not change because the band edges of the M1 phase consist of V 3d bands, where V is sixfold bonded. However, there is also a fivefold VO2/MgO structure with a much larger bandgap of up to 2.1 eV. For Ge alloying, the structure reverts to the rutile phase but with a bandgap, because GeO2 has a rutile phase. It is also found that hydrogen doping varies the oxide gap between 0 to 1 eV. The result is consistent with experimental observations and it gives an important view to explain the mechanism of alloying.

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 737109 (PHASE-CHANGE SWITCH).