WP1 deals with material optimization and qualification and is the core of the project. Three major processing techniques for thin‐film VO2 are explored in parallel (ALD growth techniques, PLD and sputter films).
Fundamental and technological innovations will concern deposition techniques on Si and GaN platforms with high film quality and with unique bandgap and transition temperature engineering via doping and strain techniques.

WP2 develops and characterize beyond CMOS solid‐state logics including two and three-terminal steep slope switches exploiting the phase-change metal-insulator transition (MIT) of VO2. In the same technology, CMOS-like current switching and neuristors cells will be included.

WP3 investigates MIT RF switches based on VO2 compatible with GaN MMIC and high resistivity Si RF CMOS technologies. Design, simulations, modeling and fabrication of circuits implementing high frequency advanced and novel reconfigurable functions up to 110 GHz applications will be performed.

WP4 explores the potential of MIT switches for neuromorphic devices as neuristors and solid‐state ionitronic switches with non‐volatile memory capability

WP5 explores the potential of MIT switches for neuromorphic devices and develops neuromorphic circuit functions based on neuristors cells and demonstrates the first solid‐state ionitronic device with non‐volatile memory capability.

WP6 enables the dissemination and exploitation of the PHASE CHANGE SWITCH findings and is devised to ensure lean, efficient and effective management of the project