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New Keynote Speaker-IEEE conference

Dr. Sigi Karg, IBM, Zurich, was a keynote speaker at DTIS 2020 conference

New article in IEEE Electron Device Letters

The article "Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators" was published in IEEE Electron Device Letters

Phase Change Workshop on Functional Oxides for Advanced Electronic Functions

The Phase Change workshop will be held on 14.01.2020 in Victoria Eurotel Villars, Villars-sur-Ollon, Switzerland,

The program of the event can be found here:



A. Ionescu & N. Barrett


Project overview: 3eFERRO

N. Barrett


Project overview: Phase-Change Switch

A. Ionescu


Keynote #1: Polarization switching kinetics in ferroelectric HfO2

A. Toriumi


Keynote #2: Using Ferroelectrics for Architectural Support of Machine Learning Models and Homomorphic Encryption Algorithms

M. Niemier


Coffee break


Keynote #3: Ferroelectric rhombohedral phase in zirconia-hafnia thin films

P. Nukala


3eFERRO Invited #1: Some emerging memory technologies and applications

P. Boivin


3eFERRO Invited #2: Impact of non-polar regions on the performance of ferroelectric HfO2 based devices

U. Schroeder


3eFERRO Invited #3: Granularity exploration for logic in memory

I. O’Connor




Keynote 4: VO2 electronic structure and alloys

J. Robertson


Phase-Change Switch Invited #1: Coupled VO2 oscillators for neuromorphic applications: challenges and opportunities

S. Karg


Phase-Change Switch Invited #2: RF functions with VO2 on GaN substrates: towards reconfigurable high frequency electronics

O. Bezencenet


Phase-Change Switch Invited #3: Ge-doped VO2 material processing and DC/RF characterization

I. Stolichnov


Panel Discussion and Q & A with all Keynotes: Role and Horizon of Functional Oxides in Future Electronics

N. Barrett,

A. Ionescu


Closure, farewell

A. Ionescu

Keynotes talks: 30 min + 5 min of questions and discussion // Invited talks: 17 min + 3 min of questions and discussion

New publication in Nature Scientific Reports

A new publication on VO2 Peano reconfigurable inductors for RF frequencies was published in December 2019 in Scientific Reports . We report here fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.

New publication: Scaled resistively-coupled VO2 oscillators for Neuromorphic Computing

In Solid-State Electronics Journal a new article on VO2 was published in a joint work of the consortium, here between:IBM Zurich-EPFL Lausanne-Cambridge University-Nov. 2019

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This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 737109 (PHASE-CHANGE SWITCH).