Different laboratories from EPFL has jointly studied the effect of doping in metal insulator transition (MIT) phase change materials. This study has resulted in a recent journal publication in APL (Journal of Applied Physics published in July 2017) which shows very promising results of doping with Germanium thin layer of VO2 in order to shift the inherent temperature of transition of this material. Further details can be found in the paper, entitled Elevated transition temperature in Ge doped VO2 thin films.